JPH0334666B2 - - Google Patents

Info

Publication number
JPH0334666B2
JPH0334666B2 JP55090873A JP9087380A JPH0334666B2 JP H0334666 B2 JPH0334666 B2 JP H0334666B2 JP 55090873 A JP55090873 A JP 55090873A JP 9087380 A JP9087380 A JP 9087380A JP H0334666 B2 JPH0334666 B2 JP H0334666B2
Authority
JP
Japan
Prior art keywords
layer
ohmic
sub
photo sensor
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55090873A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5715476A (en
Inventor
Toshuki Komatsu
Seishiro Yoshioka
Masaki Fukaya
Shunichi Uzawa
Yoshiaki Shirato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP9087380A priority Critical patent/JPS5715476A/ja
Priority to GB8120278A priority patent/GB2080025B/en
Priority to DE19813125976 priority patent/DE3125976A1/de
Priority to AU72458/81A priority patent/AU548158B2/en
Publication of JPS5715476A publication Critical patent/JPS5715476A/ja
Publication of JPH0334666B2 publication Critical patent/JPH0334666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/191Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Facsimile Heads (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP9087380A 1980-07-02 1980-07-02 Photosensor Granted JPS5715476A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9087380A JPS5715476A (en) 1980-07-02 1980-07-02 Photosensor
GB8120278A GB2080025B (en) 1980-07-02 1981-07-01 Semiconductor photosensor device
DE19813125976 DE3125976A1 (de) 1980-07-02 1981-07-01 Photosensor
AU72458/81A AU548158B2 (en) 1980-07-02 1981-07-01 Photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9087380A JPS5715476A (en) 1980-07-02 1980-07-02 Photosensor

Publications (2)

Publication Number Publication Date
JPS5715476A JPS5715476A (en) 1982-01-26
JPH0334666B2 true JPH0334666B2 (en]) 1991-05-23

Family

ID=14010612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9087380A Granted JPS5715476A (en) 1980-07-02 1980-07-02 Photosensor

Country Status (4)

Country Link
JP (1) JPS5715476A (en])
AU (1) AU548158B2 (en])
DE (1) DE3125976A1 (en])
GB (1) GB2080025B (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3650362T2 (de) * 1986-01-06 1996-01-25 Sel Semiconductor Energy Laboratory Co., Ltd., Atsugi, Kanagawa Photoelektrische Umwandlungsvorrichtung mit hoher Ansprechgeschwindigkeit und Herstellungsverfahren.
EP0229397B1 (en) * 1986-01-06 1995-08-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748546A (en) * 1969-05-12 1973-07-24 Signetics Corp Photosensitive device and array

Also Published As

Publication number Publication date
JPS5715476A (en) 1982-01-26
AU548158B2 (en) 1985-11-28
DE3125976C2 (en]) 1991-01-24
GB2080025A (en) 1982-01-27
DE3125976A1 (de) 1982-02-04
GB2080025B (en) 1985-01-09
AU7245881A (en) 1982-01-07

Similar Documents

Publication Publication Date Title
US4728370A (en) Amorphous photovoltaic elements
US5075237A (en) Process of making a high photosensitive depletion-gate thin film transistor
EP0165764B1 (en) Depletion mode thin film semiconductor photodetectors
CA1091361A (en) Semiconductor device having an amorphous silicon active region
US4528082A (en) Method for sputtering a PIN amorphous silicon semi-conductor device having partially crystallized P and N-layers
US4405915A (en) Photoelectric transducing element
US5789263A (en) Amorphous silicon color detector and manufacture of same
JP3236624B2 (ja) 光感応性電子素子、その素子を使用したカラーセンサー、及びその素子の製造方法
JPS5944791B2 (ja) 半導体素子
US4341954A (en) Photo-electric converting apparatus
US4499654A (en) Method for fabricating semiconductor photodetector
US4407710A (en) Hybrid method of making an amorphous silicon P-I-N semiconductor device
US5196911A (en) High photosensitive depletion-gate thin film transistor
JPH0334666B2 (en])
JP3342257B2 (ja) 光起電力素子
JPH0221664B2 (en])
JPS6322465B2 (en])
JPS6322074B2 (en])
JPS5825283A (ja) 光検知装置
JPS6341227B2 (en])
JP2000150935A (ja) 光起電力素子
JPS6211792B2 (en])
JPH0614560B2 (ja) フォトセンサ
JP3207448B2 (ja) 画像読み取り装置
KR970004494B1 (ko) 밀착형 이미지센서의 제조방법